Parametrics | IRFHM830D |
---|---|
ID (@ TC=100°C) max | 40.0 A |
ID (@ TC=25°C) max | 40.0 A |
ID (@ TA=25°C) max | 20.0 A |
ID (@ TA=70°C) max | 16.0 A |
ID max | 40.0 A |
Moisture Sensitivity Level | 1 |
Mounting | SMD |
Ptot (@ TA=25°C) max | 2.8 W |
Ptot max | 37.0 W |
Package | DirectFET L8 |
Polarity | N with Schottky |
QG | 13.0 nC |
Qgd | 4.5 nC |
RDS (on) (@10V) max | 4.3 mΩ |
RDS (on) max | 4.3 mΩ |
RDS (on) (@4.5V) max | 7.1 mΩ |
RthJC max | 3.4 K/W |
Tj max | 150.0 °C |
VDS max | 30.0 V |
VGS max | 20.0 V |